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A novel ESD device structure with fully silicide process for mixed high/low voltage operation.

Authors :
Jian-Hsing Lee
Shih, J.R.
Dao-Hong Yang
Chen, J.F.
Wu, K.
Source :
2008 15th International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2008, p1-4, 4p
Publication Year :
2008

Details

Language :
English
ISBNs :
9781424420391
Database :
Complementary Index
Journal :
2008 15th International Symposium on the Physical & Failure Analysis of Integrated Circuits
Publication Type :
Conference
Accession number :
80957882
Full Text :
https://doi.org/10.1109/IPFA.2008.4588153