Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 seed layer deposited using a novel precursor of TMAAB (trimethylarninealane borane).

MLA

Choon-Hwan Kim, et al. “Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 Seed Layer Deposited Using a Novel Precursor of TMAAB (Trimethylarninealane Borane).” 2007 IEEE International Interconnect Technology Conference, Jan. 2007, pp. 43–45. EBSCOhost, https://doi.org/10.1109/IITC.2007.382336.

APA

Choon-Hwan Kim, Sung-Won Lim, Hyun-Phil Kim, In-Cheol Ryu, Byung-Soo Eun, Soo-Hyun Kim, Il-Cheol Rho, Yong-Sun Sohn, Hyo-Sang Kang, & Hyeong-Joon Kim. (2007). Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 seed layer deposited using a novel precursor of TMAAB (trimethylarninealane borane). 2007 IEEE International Interconnect Technology Conference, 43–45. https://doi.org/10.1109/IITC.2007.382336

Chicago

Choon-Hwan Kim, Sung-Won Lim, Hyun-Phil Kim, In-Cheol Ryu, Byung-Soo Eun, Soo-Hyun Kim, Il-Cheol Rho, Yong-Sun Sohn, Hyo-Sang Kang, and Hyeong-Joon Kim. 2007. “Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 Seed Layer Deposited Using a Novel Precursor of TMAAB (Trimethylarninealane Borane).” 2007 IEEE International Interconnect Technology Conference, January, 43–45. doi:10.1109/IITC.2007.382336.