Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation.

Details

Language :

English

ISBNs :

9781424415083

Database :

Complementary Index

Journal :

2007 IEEE International Electron Devices Meeting

Publication Type :

Conference

Accession number :

80908790

Full Text :

https://doi.org/10.1109/IEDM.2007.4419107