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SiGe BiCMOS Technology with 3.0 ps Gate Delay.

Authors :
Riicker, H.
Heinemann, B.
Barth, R.
Bauer, J.
Blum, D.B.K.
Bolze, D.
Drews, J.
Fischer, G.G.
Fox, A.
Fursenko, O.
Grabolla, T.
Haak, U.
Hoppner, W.
Knoll, D.
Kopke, K.
Kuck, B.
Mai, A.
Marschmeyer, S.
Morgenstern, T.
Richter, H.H.
Source :
2007 IEEE International Electron Devices Meeting; 2007, p651-654, 4p
Publication Year :
2007

Details

Language :
English
ISBNs :
9781424415083
Database :
Complementary Index
Journal :
2007 IEEE International Electron Devices Meeting
Publication Type :
Conference
Accession number :
80908711
Full Text :
https://doi.org/10.1109/IEDM.2007.4419028
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