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SiGe BiCMOS Technology with 3.0 ps Gate Delay.

Details

Language :
English
ISBNs :
9781424415083
Database :
Complementary Index
Journal :
2007 IEEE International Electron Devices Meeting
Publication Type :
Conference
Accession number :
80908711
Full Text :
https://doi.org/10.1109/IEDM.2007.4419028