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Remarkable Breakdown Voltage Enhancement in AlGaN Channel HEMTs.

Authors :
Nanjo, T.
Takeuchi, M.
Suita, M.
Abe, Y.
Oishi, T.
Tokuda, Y.
Aoyagi, Y.
Source :
2007 IEEE International Electron Devices Meeting; 2007, p397-400, 4p
Publication Year :
2007

Details

Language :
English
ISBNs :
9781424415083
Database :
Complementary Index
Journal :
2007 IEEE International Electron Devices Meeting
Publication Type :
Conference
Accession number :
80908639
Full Text :
https://doi.org/10.1109/IEDM.2007.4418956
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