Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment.

Details

Language :

English

ISBNs :

9781424415083

Database :

Complementary Index

Journal :

2007 IEEE International Electron Devices Meeting

Publication Type :

Conference

Accession number :

80908637

Full Text :

https://doi.org/10.1109/IEDM.2007.4418954