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A novel cell arrangement enabling Trench DRAM scaling to 40nm and beyond.
- Source :
- 2007 IEEE International Electron Devices Meeting; 2007, p31-34, 4p
- Publication Year :
- 2007
Details
- Language :
- English
- ISBNs :
- 9781424415083
- Database :
- Complementary Index
- Journal :
- 2007 IEEE International Electron Devices Meeting
- Publication Type :
- Conference
- Accession number :
- 80908538
- Full Text :
- https://doi.org/10.1109/IEDM.2007.4418855