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Analytical Study of the DC Characteristics on the InAlAs/InGaAs Metamorphic HEMT with Oxidized InGaAs Gate.
- Source :
- 2007 IEEE Conference on Electron Devices & Solid-State Circuits; 2007, p259-262, 4p
- Publication Year :
- 2007
Details
- Language :
- English
- ISBNs :
- 9781424406371
- Database :
- Complementary Index
- Journal :
- 2007 IEEE Conference on Electron Devices & Solid-State Circuits
- Publication Type :
- Conference
- Accession number :
- 80898410
- Full Text :
- https://doi.org/10.1109/EDSSC.2007.4450111