Perfornance Enhancement for Strained HfO2 nMOSFET with Contact Etch Stop Layer (CESL) under Pulsed-IV Measurement.

Details

Language :

English

ISBNs :

9781424406371

Database :

Complementary Index

Journal :

2007 IEEE Conference on Electron Devices & Solid-State Circuits

Publication Type :

Conference

Accession number :

80898386

Full Text :

https://doi.org/10.1109/EDSSC.2007.4450087