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Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics.

Authors :
Rino Choi
Young, C.
Chang Yong Kang
Heh, D.
Bersuker, G.
Siddarth Krishnan
Kirsch, R.P.
Neugroschel, A.
Song, S.C.
Lee, B.H.
Jammy, R.
Source :
2007 14th International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2007, p26-29, 4p
Publication Year :
2007

Details

Language :
English
ISBNs :
9781424410156
Database :
Complementary Index
Journal :
2007 14th International Symposium on the Physical & Failure Analysis of Integrated Circuits
Publication Type :
Conference
Accession number :
80861155
Full Text :
https://doi.org/10.1109/IPFA.2007.4378051