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Defects spectroscopy in SiO2 by statistical random telegraph noise analysis.
- Source :
- 2006 International Electron Devices Meeting; 2006, p1-4, 4p
- Publication Year :
- 2006
Details
- Language :
- English
- ISBNs :
- 9781424404391
- Database :
- Complementary Index
- Journal :
- 2006 International Electron Devices Meeting
- Publication Type :
- Conference
- Accession number :
- 80853306
- Full Text :
- https://doi.org/10.1109/IEDM.2006.346819