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High Temperature Growth of the Dilute Nitride GaAsN using a Nitrogen ECR Plasma Source.

High Temperature Growth of the Dilute Nitride GaAsN using a Nitrogen ECR Plasma Source.

Authors :
Usher, B.
Warminski, T.
Dieing, T.
Prince, K.
Source :
2006 International Conference on Nanoscience & Nanotechnology; 2006, pN.PAG, 1p
Publication Year :
2006

Details

Language :
English
ISBNs :
9781424404537
Database :
Complementary Index
Journal :
2006 International Conference on Nanoscience & Nanotechnology
Publication Type :
Conference
Accession number :
80850947
Full Text :
https://doi.org/10.1109/ICONN.2006.340621