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High Temperature Growth of the Dilute Nitride GaAsN using a Nitrogen ECR Plasma Source.
High Temperature Growth of the Dilute Nitride GaAsN using a Nitrogen ECR Plasma Source.
- Source :
- 2006 International Conference on Nanoscience & Nanotechnology; 2006, pN.PAG, 1p
- Publication Year :
- 2006
Details
- Language :
- English
- ISBNs :
- 9781424404537
- Database :
- Complementary Index
- Journal :
- 2006 International Conference on Nanoscience & Nanotechnology
- Publication Type :
- Conference
- Accession number :
- 80850947
- Full Text :
- https://doi.org/10.1109/ICONN.2006.340621