Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f/sub T/ = 500 GHz grown by gas-source molecular beam epitaxy.

Details

Language :

English

ISBNs :

9780780395589

Database :

Complementary Index

Journal :

2006 International Conference on Indium Phosphide & Related Materials Conference Proceedings

Publication Type :

Conference

Accession number :

80848225

Full Text :

https://doi.org/10.1109/ICIPRM.2006.1634118