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High Temperature Operation at 225?C of a Half Bridge Module using GaN HFETs.

Authors :
Nomura, T.
Ishii, S.
Masuda, M.
Yoshida, S.
Yamate, T.
Sudo, Y.
Takeda, J.
Source :
2006 IEEE Vehicle Power & Propulsion Conference; 2006, p1-5, 5p
Publication Year :
2006

Details

Language :
English
ISBNs :
9781424401581
Database :
Complementary Index
Journal :
2006 IEEE Vehicle Power & Propulsion Conference
Publication Type :
Conference
Accession number :
80843363
Full Text :
https://doi.org/10.1109/VPPC.2006.364296