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Lasing at ~1.3 μm from InAs Quantum Dots with GaInNAs Embedding Layers Grown by Metalorganic Chemical Vapor Deposition.
- Source :
- 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest; 2006, p87-88, 2p
- Publication Year :
- 2006
Details
- Language :
- English
- ISBNs :
- 9780780395602
- Database :
- Complementary Index
- Journal :
- 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest
- Publication Type :
- Conference
- Accession number :
- 80823151
- Full Text :
- https://doi.org/10.1109/ISLC.2006.1708099