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The impact of mobility modulation technology on device performance and reliability for sub-90nm SOI MOSFETs.

Authors :
Yeh, W.-K.
Lai, C.-M.
Lin, C.-T.
Fang, Y.-K.
Hu, H.-H.
Chen, K.-M.
Huang, G.-W.
Source :
2005 IEEE Conference on Electron Devices & Solid-State Circuits; 2005, p91-94, 4p
Publication Year :
2005

Details

Language :
English
ISBNs :
9780780393394
Database :
Complementary Index
Journal :
2005 IEEE Conference on Electron Devices & Solid-State Circuits
Publication Type :
Conference
Accession number :
80788357
Full Text :
https://doi.org/10.1109/EDSSC.2005.1635213