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A 16M SRAM with improved characteristics using DRAM technology.
- Source :
- 2005 IEEE Asian Solid-State Circuits Conference; 2005, p17-20, 4p
- Publication Year :
- 2005
Details
- Language :
- English
- ISBNs :
- 9780780391635
- Database :
- Complementary Index
- Journal :
- 2005 IEEE Asian Solid-State Circuits Conference
- Publication Type :
- Conference
- Accession number :
- 80787996
- Full Text :
- https://doi.org/10.1109/ASSCC.2005.251778