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A 16M SRAM with improved characteristics using DRAM technology.

Authors :
Kihara, Y.
Nakashima, Y.
Izutsu, T.
Nakamoto, M.
Konishi, Y.
Yoshihara, T.
Source :
2005 IEEE Asian Solid-State Circuits Conference; 2005, p17-20, 4p
Publication Year :
2005

Details

Language :
English
ISBNs :
9780780391635
Database :
Complementary Index
Journal :
2005 IEEE Asian Solid-State Circuits Conference
Publication Type :
Conference
Accession number :
80787996
Full Text :
https://doi.org/10.1109/ASSCC.2005.251778