New stack gate insulator structure strongly reduces FIBL effect.

Authors :: Chen-Hsiao Lai
Ling-Chang Hu
Hai-Ming Lee
Long-Je Do
Ya-Chin King
Source :: 2001 International Symposium on VLSI Technology, Systems & Applications. Proceedings of Technical Papers (Cat. No.01TH8517); 2001, p216-219, 4p
Publication Year :: 2001

Language :: English
ISBNs :: 9780780364127
Database :: Complementary Index
Journal :: 2001 International Symposium on VLSI Technology, Systems & Applications. Proceedings of Technical Papers (Cat. No.01TH8517)
Publication Type :: Conference
Accession number :: 80769865
Full Text :: https://doi.org/10.1109/VTSA.2001.934523