Resonant tunneling action in ZnO/Zn0.8Mg0.2O double barrier devices.

Authors :: Krishnamoorthy, S.
Iliadis, A.A.
Inumqudi, A.
Choopun, S.
Vispute, R.D.
Venkatesan, T.
Source :: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497); 2001, p450-453, 4p
Publication Year :: 2001

Language :: English
ISBNs :: 9780780374324
Database :: Complementary Index
Journal :: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)
Publication Type :: Conference
Accession number :: 80769690
Full Text :: https://doi.org/10.1109/ISDRS.2001.984542