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A 0.4 μm 3.3 V 1T1C 4 Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection circuit.
- Source :
- 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056); 2000, p272-273, 2p
- Publication Year :
- 2000
Details
- Language :
- English
- ISBNs :
- 9780780358539
- Database :
- Complementary Index
- Journal :
- 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056)
- Publication Type :
- Conference
- Accession number :
- 80765440
- Full Text :
- https://doi.org/10.1109/ISSCC.2000.839781