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A 0.4 μm 3.3 V 1T1C 4 Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection circuit.

Authors :
Byung-Gil Jeon
Mun-Kyu Choi
Yoonjong Song
Seung-Kyu Oh
Yeonbae Chung
Kang-Deog Suh
Kinam Kim
Source :
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056); 2000, p272-273, 2p
Publication Year :
2000

Details

Language :
English
ISBNs :
9780780358539
Database :
Complementary Index
Journal :
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056)
Publication Type :
Conference
Accession number :
80765440
Full Text :
https://doi.org/10.1109/ISSCC.2000.839781