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Optical and lasing characteristics of 1.55 μm InGaAs/InGaAsP/InP quantum dots grown by MOCVD.
- Source :
- 16th IPRM. 2004 International Conference on Indium Phosphide & Related Materials, 2004; 2004, p330-333, 4p
- Publication Year :
- 2004
Details
- Language :
- English
- ISBNs :
- 9780780385955
- Database :
- Complementary Index
- Journal :
- 16th IPRM. 2004 International Conference on Indium Phosphide & Related Materials, 2004
- Publication Type :
- Conference
- Accession number :
- 80759948
- Full Text :
- https://doi.org/10.1109/ICIPRM.2004.1442722