Cite
Room-temperature lasing operation of a 1.3-µm npn-AlGaInAs/InP transistor laser.
MLA
Sato, Takashi, et al. “Room-Temperature Lasing Operation of a 1.3-Μm Npn-AlGaInAs/InP Transistor Laser.” 2011 IEEE Photonics Conference (PHO), Jan. 2011, pp. 648–49. EBSCOhost, https://doi.org/10.1109/PHO.2011.6110715.
APA
Sato, T., Shirao, M., Takino, Y., Sato, N., Nishiyama, N., & Arai, S. (2011). Room-temperature lasing operation of a 1.3-µm npn-AlGaInAs/InP transistor laser. 2011 IEEE Photonics Conference (PHO), 648–649. https://doi.org/10.1109/PHO.2011.6110715
Chicago
Sato, Takashi, Mizuki Shirao, Yuta Takino, Noriaki Sato, Nobuhiko Nishiyama, and Shigehisa Arai. 2011. “Room-Temperature Lasing Operation of a 1.3-Μm Npn-AlGaInAs/InP Transistor Laser.” 2011 IEEE Photonics Conference (PHO), January, 648–49. doi:10.1109/PHO.2011.6110715.