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A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW.

Authors :
Hoeju Chung
Byung Hoon Jeong
ByungJun Min
Youngdon Choi
Beak-Hyung Cho
Junho Shin
Jinyoung Kim
Jung Sunwoo
Joon-min Park
Qi Wang
Yong-jun Lee
Sooho Cha
Dukmin Kwon
Sangtae Kim
Sunghoon Kim
Yoohwan Rho
Mu-Hui Park
Jaewhan Kim
Ickhyun Song
Sunghyun Jun
Source :
2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2011, p500-502, 3p
Publication Year :
2011

Details

Language :
English
ISBNs :
9781612843032
Database :
Complementary Index
Journal :
2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
Publication Type :
Conference
Accession number :
80398083
Full Text :
https://doi.org/10.1109/ISSCC.2011.5746415