3D modeling based on current continuity for STM carrier profiling of semiconductor devices.

Details

Language :

English

ISBNs :

9781612844190

Database :

Complementary Index

Journal :

2011 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD)

Publication Type :

Conference

Accession number :

80396307

Full Text :

https://doi.org/10.1109/SISPAD.2011.6035074