The flexible compact SOI-MOSFET model HiSIM-SOI valid for any structural types.

Authors :: Miyake, M.
Kusu, S.
Kikuchihara, H.
Tanaka, A.
Shintaku, Y.
Ueno, M.
Nakashima, J.
Feldmann, U.
Mattausch, H.J.
Miura-Mattausch, M.
Yoshida, T.
Source :: 2011 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD); 2011, p167-170, 4p
Publication Year :: 2011

Language :: English
ISBNs :: 9781612844190
Database :: Complementary Index
Journal :: 2011 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD)
Publication Type :: Conference
Accession number :: 80396250
Full Text :: https://doi.org/10.1109/SISPAD.2011.6034968