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The field modulation effect of fluoride plasma treatment on blocking characteristics of AlGaN/GaN HEMT.
- Source :
- 2011 18th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2011, p1-5, 5p
- Publication Year :
- 2011
Details
- Language :
- English
- ISBNs :
- 9781457701597
- Database :
- Complementary Index
- Journal :
- 2011 18th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)
- Publication Type :
- Conference
- Accession number :
- 80389845
- Full Text :
- https://doi.org/10.1109/IPFA.2011.5992728