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Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node.

Authors :
Chang, J.B.
Guillorn, M.
Solomon, P.M.
Lin, C.-H.
Engelmann, S.U.
Pyzyna, A.
Ott, J.A.
Haensch, W.E.
Source :
2011 Symposium on VLSI Technology (VLSIT); 2011, p12-13, 2p
Publication Year :
2011

Details

Language :
English
ISBNs :
9781424499496
Database :
Complementary Index
Journal :
2011 Symposium on VLSI Technology (VLSIT)
Publication Type :
Conference
Accession number :
80367802