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T- x phase diagram of the TlGaS-TlFeS system and band gap of TlGaFeS (0 ≤ x ≤ 0.01) single crystals.
- Source :
- Inorganic Materials; Oct2012, Vol. 48 Issue 10, p984-986, 3p, 3 Graphs
- Publication Year :
- 2012
-
Abstract
- We have constructed the T- x phase diagram of the TlGaS-TlFeS system (simple eutectic system, eutectic at 80 mol % TlFeS with a melting point of 953 K). The system contains limited series of monoclinic solid solutions based on the ternary end-members. At an annealing temperature of 933 K, the TlGaS-based solid solution extends to 5 mol % TlFeS and the TlFeS-based solid solution extends to ≅10 mol % TlGaS. We have examined the effect of partial iron substitution for gallium on the optical properties of melt-grown single crystals of the TlGaS-based solid solutions and determined their band gap as a function of temperature and Fe concentration. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00201685
- Volume :
- 48
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Inorganic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 80032139
- Full Text :
- https://doi.org/10.1134/S0020168512090117