Back to Search Start Over

T- x phase diagram of the TlGaS-TlFeS system and band gap of TlGaFeS (0 ≤ x ≤ 0.01) single crystals.

Authors :
Mustafaeva, S.
Asadov, M.
Kyazimov, S.
Gasanov, N.
Source :
Inorganic Materials; Oct2012, Vol. 48 Issue 10, p984-986, 3p, 3 Graphs
Publication Year :
2012

Abstract

We have constructed the T- x phase diagram of the TlGaS-TlFeS system (simple eutectic system, eutectic at 80 mol % TlFeS with a melting point of 953 K). The system contains limited series of monoclinic solid solutions based on the ternary end-members. At an annealing temperature of 933 K, the TlGaS-based solid solution extends to 5 mol % TlFeS and the TlFeS-based solid solution extends to ≅10 mol % TlGaS. We have examined the effect of partial iron substitution for gallium on the optical properties of melt-grown single crystals of the TlGaS-based solid solutions and determined their band gap as a function of temperature and Fe concentration. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00201685
Volume :
48
Issue :
10
Database :
Complementary Index
Journal :
Inorganic Materials
Publication Type :
Academic Journal
Accession number :
80032139
Full Text :
https://doi.org/10.1134/S0020168512090117