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Silicon-based metallic micro grid for electron field emission.
- Source :
- Journal of Micromechanics & Microengineering; Oct2012, Vol. 22 Issue 10, p1-5, 5p
- Publication Year :
- 2012
-
Abstract
- A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 &mgr;m<superscript>2</superscript> and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13616439
- Volume :
- 22
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Micromechanics & Microengineering
- Publication Type :
- Academic Journal
- Accession number :
- 79991524
- Full Text :
- https://doi.org/10.1088/0960-1317/22/10/105009