Cite
Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch.
MLA
Hahn, Herwig, et al. “Influence of Mask Material and Process Parameters on Etch Angle in a Chlorine-Based GaN Dry Etch.” Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, vol. 30, no. 5, Sept. 2012, p. 051302. EBSCOhost, https://doi.org/10.1116/1.4738848.
APA
Hahn, H., Gruis, J. B., Ketteniss, N., Urbain, F., Kalisch, H., & Vescan, A. (2012). Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch. Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, 30(5), 051302. https://doi.org/10.1116/1.4738848
Chicago
Hahn, Herwig, Jan Berend Gruis, Nico Ketteniss, Felix Urbain, Holger Kalisch, and Andrei Vescan. 2012. “Influence of Mask Material and Process Parameters on Etch Angle in a Chlorine-Based GaN Dry Etch.” Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films 30 (5): 051302. doi:10.1116/1.4738848.