Solar-Blind Photoresistors Based on \Mg0.48 \Zn0.52\O Thin Films Grown on r\-Al2 \O3 Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.

Solar-blind photoresistors based on \Mg0.48\Zn0.52 \O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite \Mg0.48\Zn0.52\O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO photoresistors exhibit a large dark/photoresistance ratio up to \1.7 \times \10^4 with the light intensity of 0.61 \mW/cm^2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of \1.5 \times \10^-3\ \Omega^-1\cdot\W^-1 . [ABSTRACT FROM PUBLISHER]