Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2 layers using homogeneous nonavalanche injection of holes.

Investigates the oxide field dependence of hole trapping and interface state generation in silicon oxide layers using homogeneous nonavalanche injection of holes. Factors that influence the presence of very high fields in metal-oxide-semiconductor transistor; Details on the experiment; Discussion on the result of the study.