Thermal-oxidation-induced strain in 31P+-implanted Si<100>.

Authors :: Zsoldos, L.
Petö, G.
Schiller, V.
Zsoldos, E.
Brogren, G.
Source :: Journal of Applied Physics; 8/15/1990, Vol. 68 Issue 4, p1555, 3p, 1 Black and White Photograph, 2 Charts, 2 Graphs
Publication Year :: 1990
Abstract: Presents a study that examined thermal-oxidation-induced strain in Si[100] implanted by [sup31]P[sup+]. Background on the annealing of Si[111] and Si[100]; Analysis of the correlation between the formation of strain and near-surface regrowth; Results and implications.