GaAs-on-Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high-performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators.

Authors :: Chand, Naresh
Ren, F.
Macrander, A. T.
van der Ziel, J. P.
Sergent, A. M.
Hull, R.
Chu, S. N. G.
Chen, Y. K.
Lang, D. V.
Source :: Journal of Applied Physics; 3/1/1990, Vol. 67 Issue 5, p2343, 11p, 2 Charts, 11 Graphs
Publication Year :: 1990
Abstract: Discusses a study on the improved growth conditions by molecular-beam epitaxy and fabrication of state-of-the-art aluminum gallium arsenide (GaAs)/GaAs selectively doped heterostructure transistors and ring oscillators on silicon substrates. Effects of substrate misorientation on 2DEG properties; Properties of the two-dimensional electron gas; Schottky diodes characteristics and doping profiles on undoped gallium arsenide-on-silicon.

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