Properties and device applications of hydrogenated amorphous silicon carbide films.

Authors :: Rahman, M. M.
Yang, C. Y.
Sugiarto, D.
Byrne, A. S.
Ju, M.
Tran, K.
Lui, K. H.
Asano, T.
Stickle, W. F.
Source :: Journal of Applied Physics; 6/1/1990, Vol. 67 Issue 11, p7065, 6p
Publication Year :: 1990
Abstract: Presents a study which deposited hydrogenated amorphous silicon carbide (α-SiC:H) films with a radio frequency plasma-enhanced chemical vapor deposition (PECVD) system which utilizes a direct current electric field applied independently of the inductively coupled radio frequency field. Diagram of the field-enhanced PECVD; Method used in fabricating heterojunction alpha-SiC:H/c-Si diodes; Growth of the a-SiC:H films.

Subjects :: AMORPHOUS semiconductors
SILICON carbide
METALLIC films
CHEMICAL vapor deposition

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