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Raman study of the network disorder in sputtered and glow discharge a-Si:H films.

Authors :
Morell, G.
Katiyar, R. S.
Weisz, S. Z.
Jia, H.
Shinar, J.
Balberg, I.
Source :
Journal of Applied Physics; 10/15/1995, Vol. 78 Issue 8, p5120, 6p
Publication Year :
1995

Abstract

Presents information on a study which investigated the Raman spectra of hydrogenated amorphous silicon films produced by the glow discharge and radio frequency sputtering deposition techniques. Methods; Results; Discussion.

Details

Language :
English
ISSN :
00218979
Volume :
78
Issue :
8
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7663776
Full Text :
https://doi.org/10.1063/1.359743