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Deep-level analysis of n-type GaAs1-xPx alloys.

Authors :
Ben Salem, M. M.
Zaidi, M. A.
Maaref, H.
Bourgoin, J. C.
Source :
Journal of Applied Physics; 7/15/1995, Vol. 78 Issue 2, p1004, 4p
Publication Year :
1995

Abstract

Presents information on a study which investigated the properties of electron and hole traps present in n-type GaAs[sub1-x]P[subx] alloys and their evolution versus the alloy composition through deep-level transient spectroscopy. Determination of the ionization energies of electron and hole traps; Discussion; Conclusion.

Subjects

Subjects :
ELECTRONS
GALLIUM arsenide
DEEP level transient spectroscopy

Details

Language :
English
ISSN :
00218979
Volume :
78
Issue :
2
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7662326
Full Text :
https://doi.org/10.1063/1.360401
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