Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP.

Authors :: Martin, Jaime M.
García, S.
Mártil, I.
González-Díaz, G.
Castán, E.
Dueñas, S.
Source :: Journal of Applied Physics; 11/1/1995, Vol. 78 Issue 9, p5325, 6p, 1 Chart, 7 Graphs
Publication Year :: 1995
Abstract: Presents information on a study which described current-voltage, small-signal measurements and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by magnesium implantation into undoped indium phosphate. Reverse characteristics of all junctions; Experimental details; Description of the DLTS procedure; Admittance spectroscopy.

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