Effect of different preparation conditions on light emission from silicon implanted SiO2 layers.

Authors :: Ghislotti, G.
Nielsen, B.
Asoka-Kumar, P.
Lynn, K. G.
Gambhir, A.
Di Mauro, L. F.
Bottani, C. E.
Source :: Journal of Applied Physics; 6/1/1996, Vol. 79 Issue 11, p8660, 4p, 6 Graphs
Publication Year :: 1996
Abstract: Provides information on a study that performed continuous and time-gated photoluminescence of Si[sup+] implanted SiO[sub2] layers from the as-implanted samples. Experimental procedure; Results and discussion on the study; Conclusions.

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