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Resonant Raman scattering study of InSb etched by reactive ion beam etching.
- Source :
- Journal of Applied Physics; 6/1/1996, Vol. 79 Issue 11, p8853, 3p, 3 Graphs
- Publication Year :
- 1996
-
Abstract
- Presents information on a Raman study of InSb etched by reactive ion beam etching using a CH[sub4]/H[sub2]/N[sub2] plasma generated by electron cyclotron resonance. Experimental procedure; Results and discussion.
- Subjects :
- SEMICONDUCTORS
SOLID state electronics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7659517
- Full Text :
- https://doi.org/10.1063/1.362472