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Evolution of shallow donors with proton fluence in n-type silicon.
- Source :
- Journal of Applied Physics; 6/1/1996, Vol. 79 Issue 11, p8274, 4p, 1 Chart, 5 Graphs
- Publication Year :
- 1996
-
Abstract
- Presents information on a study that provided a better insight into the shallow donors induced by proton implantation and subsequent annealing at temperatures greater than or equal to 300 degrees centigrade. Experimental procedure; Results and discussion on the study.
- Subjects :
- PROTON-proton interactions
ANNEALING of metals
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7659511
- Full Text :
- https://doi.org/10.1063/1.362467