Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures.

Authors :: Turkot, B. A.
Forbes, D. V.
Robertson, I. M.
Coleman, J. J.
Rehn, L. E.
Kirk, M. A.
Baldo, P. M.
Source :: Journal of Applied Physics; 7/1/1995, Vol. 78 Issue 1, p97, 7p, 4 Black and White Photographs, 4 Graphs
Publication Year :: 1995
Abstract: Deals with a study that investigated the ion implantation damage in Al[sub0.6]Ga[sub0.4]As/gallium arsenide heterostructures. Factor to which the difference in the damage states at the bottom and top interfaces is attributed; Method used to determine the depth dependence and nature of the damage produced by the ion implantation; Reason for the greater degree of damage produced at the bottom interface.