Effect of pretreatment process parameters on diamond nucleation on unscratched silicon substrates coated with amorphous carbon films.

Authors :: Feng, Z.
Komvopoulos, K.
Bogy, D. B.
Ager, J. W.
Anders, S.
Anders, A.
Wang, Z.
Brown, I. G.
Source :: Journal of Applied Physics; 1/1/1996, Vol. 79 Issue 1, p485, 8p
Publication Year :: 1996
Abstract: Focuses on a study which investigated diamond nucleation on unscratched silicon substrates using a conventional microwave plasma-enhanced chemical vapor deposition system. Effect of pretreatment process parameters on diamond nucleation; Methodology of the study; Results and discussion.

Subjects :: DIAMOND crystals
NUCLEATION
SILICON
MICROWAVE plasmas
CHEMICAL vapor deposition

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