Optical and electrical characterization of β-FeSi2 epitaxial thin films on silicon substrates.

Presents information on a study which measured the electrical properties of metal/β-FeSi[sub2]/Si double junctions and the optical properties of β-FeSi[sub2]/Si structures. Preparation of epitaxial iron silicide films; Optical measurements; Capacitance measurements; Observation on the ac equivalent circuit for low frequencies; Use of admittance spectroscopy to characterize heterojunctions and obtain energies of impurity levels or band offsets.