Back to Search Start Over

Observation of single-carrier space-charge-limited flow in nitrogen-doped α-silicon carbide. III. Computer calculations.

Authors :
Tehrani, S.
Bosman, G.
Hench, L. L.
Van Vliet, C. M.
Source :
Journal of Applied Physics; 10/1/1986, Vol. 60 Issue 7, p2386, 10p
Publication Year :
1986

Abstract

Presents a study which analyzed computer calculations of current-voltage characteristics, impedance and noise in space-charge-limited flow in SiC crystals composed of layered polytypes. Basic transport equations; Boundary conditions specified to find a unique solution of the second-order differential charge transport equations; Computer simulation results of direct current characteristics.

Details

Language :
English
ISSN :
00218979
Volume :
60
Issue :
7
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7656366
Full Text :
https://doi.org/10.1063/1.337150