Profile distortions during secondary ion mass spectrometry analyses of resistive layers due to electron stimulated desorption and charging.

Presents a study which discussed the problem of charge compensation during secondary ion mass spectrometry depth profiling of resistive-layer structures on insulating substrates with reference to BF[sub2] and arsenic-implanted silicon-on-sapphire (SOS). Methods and materials used; Result of BF[sub2] implanted into SOS; Description of the electron stimulated desorption spectra before and after exposure; Characteristics of the boron and fluorine profiles taken from a gold-coated SOS sample.