EL2 and anion antisite defects in plastically deformed GaAs.

Authors :: Hofmann, D. M.
Meyer, B. K.
Spaeth, J.-M.
Wattenbach, M.
Krüger, J
Kisielowski-Kemmerich, C.
Alexander, H.
Source :: Journal of Applied Physics; 10/1/1990, Vol. 68 Issue 7, p3381, 5p
Publication Year :: 1990
Abstract: Discusses the investigation on the structure of the deformation-induced As[subGa] defects and resolve characteristic properties which allow to distinguish between those defects and the arsenic-grown EL2 defect. Details of the experiment; Change in the optical absorption as a function of the degree of deformation.