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Lateral spread effects in the implantation of Ar+, Xe+, and Hg+ in Si3N4 films.
- Source :
- Journal of Applied Physics; 11/1/1992, Vol. 72 Issue 9, p4003, 4p, 1 Chart, 5 Graphs
- Publication Year :
- 1992
-
Abstract
- Presents a study which examined the lateral spread effects in the implantation of Ar[sup+], Xe[sup+], and Hg[sup+] ions in Si³N[sup4] films. Experimental details; Results and discussion; Conclusion.
- Subjects :
- ION implantation
PROPERTIES of matter
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655454
- Full Text :
- https://doi.org/10.1063/1.352252