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Optically controlled characteristics of Schottky gated poly(3-alkylthiophene) field effect transistor.
- Source :
- Journal of Applied Physics; 11/1/1991, Vol. 70 Issue 9, p5035, 5p
- Publication Year :
- 1991
-
Abstract
- Reveals that the characteristics of Schottky gated field effect transistors fabricated utilizing poly(3-alkylthiophene) containing diphenyliodonium hexafluoroarsenate can be controlled by irradiating light on it. Results and discussion.
- Subjects :
- METAL semiconductor field-effect transistors
IRRADIATION
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 70
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655255
- Full Text :
- https://doi.org/10.1063/1.349008