Comparison of electrical defects in Ge+ and Si+ preamorphized BF2-implanted silicon.

Presents a study that compared electrical defects in germanium[sup+] and silicon[sup+] preamorphized BF2-implanted silicon. Way to avoid the problem of forming shallow p[sup+] regions with low-energy boron ion implantation; Sample preparation and measurement procedures; Results of deep-level transient spectroscopy measurements.